h t sc 429 .xxx - 1 812 high temperature silicon capacitor rev 2 .0 the ipdia technology offers industry leading performances relative to failure rate with a fit<0. 017. this technology also offers high reliability , up to 10 times better than alternative capacitor technologies, such as tantalum or mlcc, and eliminates cracking phenomena. thi s silicon based technology is ro hs compliant an d compatible with lead free reflow soldering process. thanks to the unique ipdia silicon capacitor technology, most of the problems encountered in demanding applications can be solved. h igh t emperature s ilicon c apacitors are dedica ted to applications where reliability up to 200c is the main parameter. this technology features a capacitor integration capability (up to 250nf/mm 2 ) which offers capacitance value similar to x7r dielectric, but with better electrical performances than c0 g/np0 dielectrics, up to 200c . htsc provides the highest capacitor stability over the full - 55c/+200c temperature range in the market with a temperature coefficient lower than 1%. key features ? high stability up to 200c: ? temperature < 1% ( - 55 c to +200 c) ? voltage <0.1 %/v ? negligible capacitance loss through aging ? unique high capacitance i n eia/1812 package size, up to 3,3 f ? high reliability (fit <0.017 parts / billion hours) ? low leakage curren t < 3na ? low esl and low esr ? suitable for lead free reflow - soldering ? key applications ? all applications up to 200c, s uch as military, aerospace and automotive industries ? high reliability applications ? replacement of x7 r and c0 g dielectrics ? decoupling / filtering / charge pump (i.e.: motor management, temperature sensors) ? downsizing
reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of an y quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent - or ot her industrial or intellectual property rights. for more information, please visit: http://www.ipdia.com to contact us, email to: sales@ipdia.com date of release: xxxxxxxxxxxx xxxx document identifier: xxxxxxxxxxxxx h t sc429 .xxx electrical specification (*) thinner thickness (as low as 1 0 0 m thick) available, see low profile s ilicon capacitor product: lpsc (**) other values on request. part number 935.13 2 . b . 2 s . u xx i.e.: 3.3 f/1812 case (h t sc type) ? 935.13 2 . 42 9 .7 3 3 termination and outline parameters value capacitance range 1f to 3.3 f ( **) capacitance tolerances 1 5 % ( **) operating temperature range - 55 c to 20 0 c storage temperatures - 70 c to 21 5 c temperature coefficient <1 %, from - 55 c to +20 0 c breakdown voltage (bv) 11 v dc (**) capacitance variation versus rvdc 0.1 % /v (from 0 v to rvdc) equivalent serial inductor (esl) max 1n h equivalent serial resistor (esr) max 8 00m ? (**) insul ation resistance 1 g ? min @ 3v,25c 100m ? min @ 3v,20 0c ageing negligible, < 0.001 % / 1 0 00 h reliability fit<0.017 parts / billion hours, capacitor height max 40 0 m (*) capacitance value 10 22 27 33 47 unit 1 nf 10 nf contact ipdia sales contact ipdia sales contact ipdia sales contact ipdia sales 0,1 f 1f 935.xxx.xxx.xxx 2.2 f 935.xxx.xxx.xxx 2.7 f 935.xxx.xxx.xxx 3.3 f 935.132 .42 9 .733 1 f typ. 1812 comp. size l 4.66 0.05 w 3.56 0.05 ipd land patterns size x 0.9 y 3.4 arial 18 bold rev. commercial leaflet termination lead - free nickel/solder coatin g compatible with automatic soldering technologies: reflow and manual typical dimensions, all dimensions in mm package outline 5 = 1n 6 = 10n 7 = 0.1u 8 = 1u 9 = 10u unit 0 = 10f 1 = 0.1p 2 = 1p 3 = 10p 4 = 0.1n fig.1 capacitance change versus temperatu re variation compar ed with alternative dielectrics fig.2 capacitance change versus voltage variation compared with alternative dielectrics fig.3 esl versus capacitance value compar ed with alternative dielectrics size 9 = 1 812 breakdown v oltage 4 = 11v value (e6) w l land pattern ipd component solder resist dc voltage stability mlcc capacitors vs. pics -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 10 0 1 2 3 4 5 6 7 bias voltage (v) capacitance change (%) y5v x7r pics c0g esl (nh) @25c 0402 c0g(npo) vs. pics 0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9 1 1,1 0 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 capacitance (pf) esl(nh) pics c0g
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